Influence of an epitaxial Si capping of Ge islands on Si(0 0 1) and Si(1 1 0) by LPCVD

Investigation of the Substrate/Epitaxial Interface of Si/Si1-xGex Layers Grown by LPCVD

The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(1 0 0) by ultrahigh vacuum chemical vapor deposition

High-quality Ge epilayer on Si(1 0 0) substrate with an inserted low-temperature Ge seed layer and a thin Si0.77Ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. The epitaxial Ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 10 cm 2 was obtained. The influence of low temperature Ge seed layer on the quality of Ge epilayer was ...

Adsorption sites of Te on Si ( 0 0 1 )

Using multiple surface science techniques, we have investigated the structure of 0.3–1 Te monolayers adsorbed on Si(0 0 1). X-ray standing waves, low-energy electron diffraction, temperature-programmed desorption, and Auger electron spectroscopy show a relatively poorly-ordered surface. The disorder is due to two nearly degenerate Te adsorption sites, which tends to double the periodicity along...

بررسی‌های ساختاری و مغناطیسی نانوذرات‌ پروسکایت LaMn1-xCoxO3 (0/1، 75/0، 5/0، 25/0، 0/0 = x)

In this work, the structural and magnetic properties of LaMn1-xCoxO3 (x = 0.00, 0.25, 0.50, 0.75, 1.00) are investigated. The structural characterization of compounds by X-ray powder diffraction is evidence for a rhombohedral structure (R -3c space group). Much less increase of the unit cell volume suggests that Co enters in lattice as Co+2 for x ≤ 0.5 while much more decrease of the unit cell ...

Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)